| PART |
Description |
Maker |
| P8SG-053R6ZH52M P8SG-0505ZH52M P8SG-247R2ZH52M |
Input voltage:5V, output voltage /-3.6V ( /-200mA), 5.2KV isolated 1.5W regulated single output
Input voltage:5V, output voltage /-5V ( /-150mA), 5.2KV isolated 1.5W regulated single output
Input voltage:24V, output voltage /-7.2V ( /-100mA), 5.2KV isolated 1.5W regulated single output
|
PEAK electronics
|
| CG3310 ECG3323 ECG3312 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-247VAR
|
|
| RT3-5-L2-SMT |
RELAY 2KV DIELECTRIC STRENGTH SMT TYPE
|
Adam Technologies, Inc.
|
| 2T2KF |
2KV Diode, Axial Leaded Fast Recovery Rectifier Diodes
|
Semtech Corporation
|
| VDI150-12S4 VID150-12S4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 150A一c
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 150A一（c
|
Samtec, Inc.
|
| TYN1225 |
SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),16A I(T),TO-220
From old datasheet system
|
ST Microelectronics
|
| DMN2300U DMN2300U-7 |
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV
|
TY Semiconductor Co., Ltd
|
| IRKT430-20 |
THYRISTOR MODULE|SCR DOUBLER|2KV V(RRM)|430A I(T) 晶闸管模块|可控硅倍增| 2kV的五（无线资源管理）| 430A我（翻译
|
International Rectifier, Corp.
|
| HGT1S1N120CNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 6.2AI（丙）|63AB
|
Intersil, Corp.
|
| QM50TB24 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1.2KV五（巴西）总裁| 50A条一（c
|
Mitsubishi Electric, Corp.
|
